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Ships within 48 hours · Estimated delivery Aug 11 - Aug 16
· Two sockets per board enable parallel or multiplexed testing
which are optimal for sensing of gases and volatile compounds
Warp: 30 µm
05 wt%): >95% (*)
GFAB - Graphene Foundry Services
Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFET · Two sockets per boardMonolayer Graphene film on Si3N4 (10 mm x 10 mm) Processed in ISO 7 Cleanroom Monolayer Graphene produced by CVD on copper catalyst and transferred to a Si3N4 substrate using semi dry transfer process. This product is ideal for R&D departments and universities. Graphene Film Transparency: > 97 % Coverage: > 95% Polymer assisted transfer Thickness (theoretical): 0. 345 nm Hall Electron Mobility on Si3N4: 1432428 cm2 Vs Sheet Resistance: 576172 Ohms sq
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