GFET-S10 for Sensing applications GFET Substrate SiO2/Si

Substrate SiO2/Si

· Chip dimensions: 4 mm x 4 mm

· Particles: <10@0

· Gate oxide thickness: 90 nm

Our Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility

GFET-S10 for Sensing applications GFET Substrate SiO2/SiGFET S10 (Die size 10 mm x 10 mm) Processed in ISO 7 Cleanroom The GFET S10 chip from Graphenea provides 30 graphene devices distributed in a grid pattern on the chip. Thirty devices have a Hall bar geometry and six have a 2 probe geometry. The Hall bar devices can be used for Hall bar measurements as well as 4 probe and 2 probe devices. There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties.