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ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFE Neutrik NBB75FA Approvals UL Zero Power Resistance

SKU 99985970142
4.9
USD539.18 USD563.18

Pay in 4 interest-free payments of $134.79 Learn more

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USA
  • USA
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Ships within 48 hours · Estimated delivery Aug 12 - Aug 17

Description

Approvals UL Zero Power Resistance at 25°C 5ohm Product Range B57235S0 Series Disc Size 9

This B&H Kit includes the Watson Compact AC/DC Charger and an interchangeable Battery Plate for Samsung IA-BH130LB type batteries

Telescoping Trolley Handle

a wired remote control and 0

Integrated MP3 Player

ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFE Neutrik NBB75FA Approvals UL Zero Power ResistanceThe MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built in base emitter shunt resistor. High DC current gain Collector base voltage (Vcbo = 120V) Emitter base voltage (Vcbo = 5V) Applications Industrial Product details Power Dissipation Pd 200W DC Collector Current 30A Collector Emitter

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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