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DIODES INC FZT853 Bipolar (BJT) Single Transistor, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE Sigma 302963 Brand SCHAFFNER Part Number RN202-2-02-1M1

SKU 70823923643
4.3
USD108.36 USD158.36

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Description

Brand SCHAFFNER Part Number RN202-2-02-1M1 Quantity Each Technical Data Sheet EN

Object Based Motion Detection Object based motion detection allows you to specify what type of motion will trigger predefined events

The Archival Methods 11

45 cm Weight 2

using 3200 w/s @ 6

DIODES INC FZT853 Bipolar (BJT) Single Transistor, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE Sigma 302963 Brand SCHAFFNER Part Number RN202-2-02-1M1The FZT853 is a 100V NPN Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL STD 202 standard, method 208. High continuous collector current Low saturation voltages hFE specified up to 10A for a high gain hold up Complementary PNP type FZT953 AEC Q101 qualified UL94V 0 Flammability rating Applications Automotive, Aerospace, Defence, Military Warnings ESD sensitive device, take proper precaution while

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